1/8 dcr1675sz www.dynexsemi.com features double side cooling high surge capability high mean current fatigue free applications high power drives high voltage power supplies dc motor control voltage ratings ordering information when ordering, select the required part number shown in the voltage ratings selection table. for example: dcr1675sz51 note: please use the complete part number when ordering and quote this number in any future correspondance relating to your order. key parameters v drm 5200v i t(av) 3770a i tsm 50000a dvdt* 1000v/ s di/dt 300a/ s *higher dv/dt selections available dcr1675sz phase control thyristor advance information supersedes january 2000 version, ds4648-6.0 ds4648 -7.1 july 2001 dcr1675sz52 dcr1675sz51 dcr1675sz50 DCR1675SZ49 dcr1675sz48 conditions t vj = 0? to 125?c, i drm = i rrm = 500ma, v drm , v rrm t p = 10ms, v dsm & v rsm = v drm & v rrm + 100v respectively lower voltage grades available. type number repetitive peak voltages v drm v rrm v 5200 5100 5000 4900 4800 fig. 1 package outline outline type code: z. see package details for further information.
2/8 www.dynexsemi.com dcr1675sz current ratings t case = 80?c unless stated otherwise. symbol parameter conditions double side cooled i t(av) mean on-state current i t(rms) rms value i t continuous (direct) on-state current single side cooled (anode side) i t(av) mean on-state current i t(rms) rms value i t continuous (direct) on-state current units max. half wave resistive load 2975 a - 4670 a - 4230 a half wave resistive load 1920 a - 3015 a - 2510 a current ratings t case = 60?c unless stated otherwise. symbol parameter conditions double side cooled i t(av) mean on-state current i t(rms) rms value i t continuous (direct) on-state current single side cooled (anode side) i t(av) mean on-state current i t(rms) rms value i t continuous (direct) on-state current units max. half wave resistive load 3770 a - 5920 a - 5486 a half wave resistive load 2476 a - 3889 a - 3333 a
3/8 dcr1675sz www.dynexsemi.com surge ratings conditions 10ms half sine; t case = 125 o c v r = 50% v rrm - 1/4 sine 10ms half sine; t case = 125 o c v r = 0 max. units symbol parameter i tsm surge (non-repetitive) on-state current i 2 ti 2 t for fusing i tsm surge (non-repetitive) on-state current i 2 t i 2 t for fusing 19.5 x 10 6 a 2 s 62.5 ka 12.5 x 10 6 a 2 s 50.0 ka thermal and mechanical data dc conditions min. max. units o c/w - 0.013 anode dc clamping force 83.0kn with mounting compound thermal resistance - case to heatsink r th(c-h) 0.001 double side - 125 o c t vj virtual junction temperature t stg storage temperature range reverse (blocking) single side - thermal resistance - junction to case r th(j-c) single side cooled symbol parameter clamping force 74.0 91.0 kn ?5 125 o c - on-state (conducting) - 135 o c - 0.002 o c/w o c/w cathode dc - 0.013 o c/w double side cooled - 0.0065 o c/w
4/8 www.dynexsemi.com dcr1675sz dynamic characteristics parameter symbol conditions typ. max. units gate trigger characteristics and ratings v drm = 5v, t case = 25 o c conditions parameter symbol v gt gate trigger voltage v drm = 5v, t case = 25 o c i gt gate trigger current v gd gate non-trigger voltage at v drm t case = 125 o c v fgm peak forward gate voltage anode positive with respect to cathode v fgn peak forward gate voltage anode negative with respect to cathode v rgm peak reverse gate voltage i fgm peak forward gate current anode positive with respect to cathode p gm peak gate power see table, gate characteristics curve p g(av) mean gate power 3.5 v 500 ma 0.25 v 30 v 0.25 v 5v 30 a 150 w 10 w max. units i rrm /i drm peak reverse and off-state current at v rrm /v drm , t case = 125 o c from 67% v drm to 1000a gate source 30v, 10 ? t r = 0.5 s to 1a, t j = 125 o c dv/dt maximum linear rate of rise of off-state voltage to 67% v drm t j = 125 o c, gate open circuit. - 500 ma - 1000 v/ s repetitive 50hz - 150 a/ s non-repetitive - 300 a/ s rate of rise of on-state current di/dt v t(to) threshold voltage at t vj = 125 o c r t on-state slope resistance at t vj = 125 o c t gd delay time 1.0 -v - 0.15 m ? - 1.1 s v d = 67% v drm , gate source 20v, 10 ? t r = 0.5 s, t j = 25 o c i l latching current t j = 25 o c, v d = 5v i h holding current t j = 25 o c, r g-k = - 650 ma - 200 ma
5/8 dcr1675sz www.dynexsemi.com curves fig.2 maximum (limit) on-state characteristics fig.3 dissipation curves v tm equation:- v tm = a + bln (i t ) + c.i t +d. i t where a = 0.8497627 b = ?.03614853 c = 5.286579 x 10 ? d = 0.01334724 these values are valid for t j = 125?c for i t 500a to 5000a 0.5 1.0 1.5 2.0 instantaneous on-state voltage, v t - (v) 0 1000 2000 3000 4000 5000 instantaneous on-state current, i t - (a) measured under pulse conditions t j = 125 ? c 0 1000 2000 3000 4000 mean on-state current, i t(av) - (a) 0 2000 4000 6000 8000 10000 mean power dissipation - (w) d.c. half wave 3 phase 6 phase 5000
6/8 www.dynexsemi.com dcr1675sz fig.6 transient thermal impedance - junction to case fig.4 stored charge fig.5 gate characteristics fig.7 surge (non-repetitive) on-state current vs time (with 50% v rrm at t case = 125?c) 100 10 1 0.1 0.001 0.1 0.01 1.0 10 v fgm lower lim it 1% upper limit 99% t j = 25 ? c v gd gate trigger voltage, v gt - (v) gate trigger current, i gt - (a) 100w 50w 20w 10w i gd i fgm table gives pulse power p gm in watts pulse width s 100 200 500 1ms 10ms 50 150 150 150 150 20 100 150 150 150 100 - 400 150 125 100 25 - frequency hz 10 1 0.1 0.01 0.001 time - (s) 0.1 0.01 0.001 0.0001 thermal impedance - ( ? c/w) double side cooled anode side cooled 100 conduction d.c. halfwave 3 phase 120 ? 6 phase 60 ? effective thermal resistance junction to case ? c/w double side 0.0065 0.0072 0.0073 0.0076 anode side 0.0130 0.0137 0.0138 0.0141 0.1 1.0 10 100 rate of decay of on-state current di/dt - (a/s) 100000 10000 1000 total stored charge, q s - (c) t j = 125 ? c i t = 600a i rm q s t p = 3ms i t di/dt 100 75 50 25 0 peak half sine wave on-state current - (ka) 11012345 50 ms cycles at 50hz duration 0 7.5 i 2 t value - (a 2 s x 10 6 ) i 2 t i 2 t = 2 x t 2 125 10 20 30 5.0 2.5 10.0 12.5
7/8 dcr1675sz www.dynexsemi.com package details for further package information, please contact your nearest customer service centre. all dimensions in mm, unless stated otherwise. do not scale. 151 max 100 100 148 max 37.5 max 2 holes 3.6 0.5 depth 2.0 (one in each electrode) cathode anode gate tab cathode tab nominal weight: 2800g clamping force: 83kn 10% lead length: 500mm lead terminal connector: m4 ring package outline type code: z
8/8 www.dynexsemi.com dcr1675sz power assembly capability the power assembly group was set up to provide a support service for those customers requiring more than the basic semiconducto r, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capabi lity of our semiconductors. we offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today . the assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing need s of our customers. using the latest cad methods our team of design and applications engineers aim to provide the power assembly complete solution (pacs). device clamps disc devices require the correct clamping force to ensure their safe operation. the pacs range includes a varied selection of pre-loaded clamps to suit all of our manufactured devices. types available include cube clamps for single side cooling of t 23mm and e 30mm discs, and bar clamps right up to 83kn for our z 100mm thyristors and diodes. clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. please refer to our application note on device clamping, an4839 heatsinks the power assembly group has its own proprietary range of extruded aluminium heatsinks. they have been designed to optimise th e performance of dynex semiconductors. data with respect to air natural, forced air and liquid cooling (with flow rates) is avai lable on request. for further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or custome r service office. customer service centres mainland europe tel: +33 (0)1 58 04 91 00. fax: +33 (0)1 46 38 51 33 north america tel: (613) 723-7035. fax: (613) 723-1518. uk, scandinavia & rest of world tel: +44 (0)1522 500500. fax: +44 (0)1522 500020 sales offices mainland europe tel: +33 (0)1 58 04 91 00. fax: +33 (0)1 46 38 51 33 north america tel: (613) 723-7035. fax: (613) 723-1518. toll free: 1.888.33.dynex (39639) / tel: (949) 733-3005. fax: (949) 733-2986. uk, scandinavia & rest of world tel: +44 (0)1522 500500. fax: +44 (0)1522 500020 these offices are supported by representatives and distributors in many countries world-wide. ? dynex semiconductor 2001 publication no. ds4648-7 issue no. 7.1 july 2001 technical documentation not for resale. printed in united kingdom headquarters operations dynex semiconductor ltd doddington road, lincoln. lincolnshire. ln6 3lf. united kingdom. tel: 00-44-(0)1522-500500 fax: 00-44-(0)1522-500550 dynex power inc. 99 bank street, suite 410, ottawa, ontario, canada, k1p 6b9 tel: 613.723.7035 fax: 613.723.1518 toll free: 1.888.33.dynex (39639) this publication is issued to provide information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. no warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. the company reserves the right to alter without prior notice the specification, design or price of any product or service. information concerning p ossible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. it is the user's responsibility to fully determine the p erformance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. these products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. all products and materials are sold and services provided subject to the company's conditions of sale, w hich are available on request. all brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respec tive owners. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com datasheet annotations: dynex semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. the annota tions are as follows:- target information: this is the most tentative form of information and represents a very preliminary specification. no actual design work on the product has been started. preliminary information: the product is in design and development. the datasheet represents the product as it is understood but details may change. advance information: the product design is complete and final characterisation for volume production is well in hand. no annotation: the product parameters are fixed and the product is available to datasheet specification.
|
